| 摘要 |
Disclosed are precursor compounds useful for deposition of a metal oxide film, which is applied to a capacitor of electronic elements such as semiconductor, to a substrate such as silicon, and a process for depositing such film. The precursor compounds have the formula (1): wherein M is a metal element selected from the Groups 2A, 3A, 4A, 5A, 3B, 4B, 5B and 8B of the Periodic Table; x and y are integers of 1 to 4, provided that the sum of x and y is an integer of 2 to 5; R is hydrogen, fluoro, alkyl group containing 1 to 4 carbon atoms, perfluoroalkyl group or perfluoroaryl group; R1 and R2 independently are an alkyl group containing 1 to 8 carbon atoms, perfluoroalkyl group or alkoxyalkyl group; A is perfluoroalkylalkoxy or alkoxyalkylalkoxy having the formula (2:-O-(CHR3)l-(CR4R5)m-R6 (2)wherein R3 is hydrogen, fluoro, or alkyl or perfluoroalkyl having 1 to 4 carbon atoms; R4 and R5 are the same or different and are hydrogen, fluoro, or alkyl or alkoxy having 1 to 4 carbon atoms; R6 is alkyl or perfluoroalkoxy having 1 to 4 carbon atoms, or an amide group; l and m are integers of 0 to 4; L is a Lewis base; and n is an integer of 0 or more.
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