发明名称 Product mask used in the production of microelectronics comprises a quartz layer, and a masking layer on the quartz layer for masking predetermined regions of the quartz layer to project the semiconductor layers
摘要 Product mask comprises: a quartz layer; and a masking layer on the quartz layer for masking predetermined regions of the quartz layer to project the semiconductor layers. The mask surface has one or more predetermined defects, each of which is masked by a mark on the mask surface. Independent claims are also included for the following: (i) a phase shift mask comprising the above product mask with a number of trenches formed in the quartz layer; and (ii) a process for the production of the phase shift mask. Preferred Features: Each mark comprises a number of markers each assigned a marker type with a predetermined defect parameter. The markers are rectangular and are formed by a quartz protrusion or quartz hole on or in the quartz layer.
申请公布号 DE10160458(A1) 申请公布日期 2003.06.26
申请号 DE2001160458 申请日期 2001.11.30
申请人 INFINEON TECHNOLOGIES AG 发明人 DETTMANN, WOLFGANG;ANTESBERGER, GUNTER;HEUMANN, JAN;HENNIG, MARIO
分类号 G03F1/00 主分类号 G03F1/00
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