发明名称 CVD OR ETCHING PROCESS USING 02/03 GAS MIXTURE
摘要 <p>A method including in a wafer processing environment, introducing a liquid (416) via a carrier gas, and separate from the liquid, introducing a first gas comprising ozone and a legacy amount of oxygen (420) and a second gas comprising an effective amount of oxygen (430) to modify a process operation. A system including a chamber, a liquid source, a first gas source, and a second gas source, a controller configured to control the introduction into the chamber of a liquid from the liquid source, a first gas comprising ozone and a legacy amount of oxygen from the first gas source, a second gas comprising oxygen from the second gas source.</p>
申请公布号 WO2003052163(A1) 申请公布日期 2003.06.26
申请号 US2002037193 申请日期 2002.11.19
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