Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing

摘要

Methods are disclosed for forming gate dielectrics for MOSFET transistors, wherein a bilayer deposition of a nitride layer and an oxide layer are used to form a gate dielectric stack. The nitride layer is formed on the substrate to prevent oxidation of the substrate material during deposition of the oxide layer, thereby avoiding or mitigating formation of low-k interfacial layer.