发明名称 |
Graded semiconductor layers for reducing threshold voltage for a nitride-based laser diode structure |
摘要 |
Graded semiconductor layers between GaN and AlGaN layers in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.
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申请公布号 |
US2003118066(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
US20010024239 |
申请日期 |
2001.12.21 |
申请人 |
XEROX CORPORATION |
发明人 |
BOUR DAVID P.;KNEISSL MICHAEL A. |
分类号 |
H01S5/042;H01S5/32;H01S5/323;H01S5/343;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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