| 摘要 |
A TFT substrate comprises a substrate, a gate electrode and a lower electrode of a capacitor formed thereon, a first insulating layer formed thereon, a channel layer above the gate electrode and a lower layer of an upper electrode of the capacitor, a channel protection layer formed on an intermediate part of said channel layer and a capacitor protection layer formed on a connection region of the lower layer, source/drain electrodes formed on said channel layer and an upper layer of the upper electrode of the capacitor formed on the lower layer and covering the capacitor protection layer, a second insulating layer covering them, a first connection hole exposing the source electrode and a second connection hole exposing a connection region of said upper layer, which are penetrating the second insulating layer, and a pixel electrode formed thereon.
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