发明名称 LPCVD APPARATUS, AND THIN FILM DEPOSITION METHOD
摘要 PURPOSE: An LPCVD(Low Pressure Chemical Vapor Deposition) apparatus and a thin film deposition method are provided to be capable of collecting organic metal compounds from used raw materials with a trap which can recycle more metal compounds without increasing the trap capacity. CONSTITUTION: An LPCVD apparatus includes a vessel body, a heating unit, a reactor, an evacuation pump and a trap for cooling the used raw gas for the reactor. The vessel body accommodates metal compounds as raw materials. The heating unit heats the vessel body to vaporize the organic metal compounds into raw gas. The reactor stores a substrate with a thin film deposited thereon. The evacuation pump keeps the reactor at a low pressure atmosphere. The trap has a cylinder having a honeycomb structure in a flow passage through which the used raw materials flow.
申请公布号 KR20030052240(A) 申请公布日期 2003.06.26
申请号 KR20020067651 申请日期 2002.11.02
申请人 TANAKA KIKINZOKU KOGYO K.K. 发明人 SAITO MASAYUKI
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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