| 摘要 |
A ferroelectric memory device has a lower electrode, ferroelectric layer and a first portion of an upper electrode that are formed as a stack over a semiconductor substrate. Sidewalls of the stack are covered with a second portion of the upper electrode. An insulating spacer is disposed between the lower electrode and the second portion of the upper electrode. The second portion of the upper electrode is electrically connected to the first portion of the upper electrode yet electrically insulated by the insulating spacer from the lower electrode. At least one of the first and second portions of the upper electrode is formed of a hydrogen barrier layer to protect the ferroelectric layer of the stack from hydrogen ions.
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