METHOD FOR FABRICATING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to obtain a stable electrical characteristic by preventing a loss in the corner of the isolation layer filled in a trench so that residue is not generated in a subsequent process. CONSTITUTION: After an isolating oxide layer(2) and a mask insulation layer are sequentially formed on a silicon substrate(1), a mask pattern is formed. The mask insulation layer and the isolating oxide layer are sequentially etched by a predetermined portion through a dry etch process using the mask pattern. After the mask pattern is eliminated, a predetermined portion of the isolating oxide layer left on the silicon substrate is completely removed to form the trench. An epitaxial silicon layer is grown on the resultant structure to form an epitaxial silicon active region(5).