发明名称 |
Air gap dielectric in self-aligned via structures |
摘要 |
A high speed interconnect structure and methods for making the structure are provided. The interconnect structure includes a first metallization layer having a plurality of metallization lines and a conductive via metallization layer defined over the first metallization layer. The conductive via metallization layer is configured to define self-aligned conductive vias. A non-conformal oxide layer is defined over the first metallization layer and the conductive via metallization layer such that air gaps are positioned between the plurality of metallization lines. A cap oxide layer is then defined over the non-conformal oxide. In this example, a CMP operation can be performed to expose the top surfaces of the conductive vias before a next metallization layer is defined. It should be noted that air gaps are defined without the problems associated with conductive via misalignment.
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申请公布号 |
US6281585(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US19990439098 |
申请日期 |
1999.11.12 |
申请人 |
PHILIPS ELECTRONICS NORTH AMERICA CORPORATION |
发明人 |
BOTHRA SUBHAS |
分类号 |
H01L23/522;H01L21/768;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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