METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the dishing phenomenon and contact failure of a wiring by forming the wiring without polishing a metal layer. CONSTITUTION: An interlayer dielectric(40) is formed on a substrate(10) having a conductive layer(30). A hole is formed in the interlayer dielectric(40) for exposing the conductive layer(30). A seed layer(50) is formed along the entire surface of the resultant structure. The seed layer(50) is polished for exposing the interlayer dielectric(40). A metal layer(62) is formed from the seed layer(50) by an electrolysis plating method for completely filling in the hole. Preferably, a copper layer is used as the metal layer(62). Preferably, a heat treatment is carried out after polishing the seed layer(50). Preferably, a heat treatment is carried out after forming the metal layer(62).