| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of solving the bias problem between an NMOS and PMOS gate electrode, and the channeling problem of the NMOS gate electrode by carrying out a pre-ion implantation process after forming a source/drain region. CONSTITUTION: A plurality of isolation layers(102) are formed in a semiconductor substrate(100) for separating NMOS and PMOS region. An NMOS and PMOS gate electrode(110,112) are formed at the NMOS and PMOS region, respectively. An NMOS and PMOS source/drain region are formed at the NMOS and PMOS region, respectively. After opening the upper portion of the NMOS gate electrode, a pre-ion implantation process is carried out at the NMOS gate electrode.
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