| 摘要 |
PURPOSE: A method for fabricating a copper interconnection of a semiconductor device is provided to reduce the resistance of an interconnection or via contact by eliminating a pit or void inside a copper electroplating layer. CONSTITUTION: A trench is formed in a semiconductor substrate. A barrier metal layer is deposited inside the trench. An electroplating process is performed at low pressure to form a copper layer. Fine bubbles generated at atmospheric pressure are eliminated by a pressure difference. A sputtering process is performed while an annealing process is performed. The copper layer and the barrier metal layer are planarized.
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