| 摘要 |
PURPOSE: A method for forming a silicide layer of a semiconductor device is provided to be capable of conserving low contact resistance and stable contact resistance by forming a mixed silicide layer made of a titanium silicide layer, a cobalt titanium silicide layer, and a cobalt silicide layer on a gate electrode and a source/drain region. CONSTITUTION: After sequentially forming a gate isolating layer(104) and a gate electrode(106) on a semiconductor substrate(102), a sidewall spacer(108) is formed at both sidewalls of the gate electrode. After forming a titanium metal layer on the resultant structure, a titanium silicide layer(110a,110b) is formed by carrying out the first heat treatment. After forming a cobalt metal layer on the resultant structure, a cobalt titanium silicide layer and a cobalt silicide layer(112a,112b) are formed by carrying out the third heat treatment. Preferably, the first heat treatment is carried out at the temperature of 650-850°C for 10-60 seconds under nitrogen atmosphere. Preferably, the third heat treatment is carried out at the temperature of 400-600°C for 10-60 seconds under nitrogen atmosphere.
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