| 摘要 |
PURPOSE: A method for forming a trench isolation layer in a semiconductor device is provided to be capable of preventing moat in STI(Sallow Trench Isolation) processing. CONSTITUTION: A pad oxide layer(21) and a silicon nitride layer are sequentially formed on a silicon substrate(20). A trench is formed by sequentially etching the silicon nitride layer, the pad oxide layer and the silicon substrate. A silicon oxide layer(24) is deposited on the resultant structure so as to fill the trench. The resultant structure is planarized, and the silicon oxide layer(24) located on the silicon nitride layer is simultaneously removed. By removing the silicon nitride layer, the silicon oxide layer(24) is protruded to "δ" from the pad oxide layer(21). Then, an insulating spacer(26) is formed at both sidewalls of the protrudent silicon oxide layer(24).
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