| 摘要 |
PURPOSE: A test pattern of a semiconductor device is provided to protect MOSFET pattern by using a phenomenon that the current of a gate oxide layer increases suddenly with reducing the thickness of the gate oxide layer. CONSTITUTION: The test pattern of a semiconductor device comprises the first MOSFET having the first gate oxide layer(33) thick between the first gate electrode(37a) and a semiconductor substrate(31), including the first source/drain(39a,41a), and the second MOSFET having the second gate oxide layer(33) thin between the second gate electrode(37b) and the semiconductor substrate(31), including the first source/drain(39b,41b).
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