GATE OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a gate of a semiconductor device is provided to prevent the reliability of a gate oxide layer from being decreased by preventing an electronic trap from being formed in the gate oxide layer such that the electronic trap is formed when fluorine diffuses into the gate oxide layer. CONSTITUTION: A semiconductor substrate(11) is prepared which is divided into an active region and an inactive region. A gate insulation layer(15) is formed on the semiconductor substrate. A conductive layer containing a polycrystalline silicon layer and tungsten is stacked on the gate insulation layer. A nitrogen implantation process is performed on the resultant structure. A tungsten silicon nitride layer(23) is formed on an interface between the conductive layer including the tungsten and the polycrystalline silicon layer.