| 摘要 |
PURPOSE: A metal line of a semiconductor device is provided to be capable of minimizing the generation of voids and increasing the lifetime of the device by forming a metal atom reservoir at the end portion of the metal line. CONSTITUTION: A lower metal line(13) and an upper metal line are connected with each other by using a plug part, wherein the plug part is formed in an interlayer dielectric. At this time, the plug part is provided with a plurality of plugs(16a,16b). The lower metal line(13) includes a metal atom reservoir(200) formed at the end portion of the lower metal line for compensating the connecting portion between the lower metal line(13) and the plugs(16a,16b) for metal atoms. Preferably, the metal atom reservoir(200) is capable of being formed at both ends of the lower metal line(13). Preferably, the metal atom reservoir(200) is made of the same material as the lower metal line(13).
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