METHOD FOR MANUFACTURING CAPACITOR IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to prevent the leakage current caused by using a TiN layer as a hard mask and the reduction of polarization. CONSTITUTION: An interlayer dielectric(13) having the first contact hole is formed on semiconductor substrate(11). A plug(15) is formed to bury the first contact hole. A bottom electrode(21), a dielectric layer(23) and a top electrode(25) are sequentially formed on the interlayer dielectric. An Al2O3(57) and AlN(59) layer as a hard mask layer are sequentially formed on the top electrode. The Al2O3 and AlN layer are etched by an etching process using a mask for a capacitor. The top electrode, bottom electrode, the dielectric layer and the bottom electrode are etched using The Al2O3 and AlN layer as a mask.