| 摘要 |
PURPOSE: A pattern collapse inhibiting method using RELACS(Resist Enhancement Lithography Assisted by Chemical Shrink) material is provided to be capable of increasing the aspect ratio of the pattern. CONSTITUTION: An anti-scattered reflection layer is coated on the upper portion of an etching object layer. RELACS material is coated on the upper portion of the anti-scattered reflection layer. After coating a photoresist layer on the upper portion of the RELACS material, the resultant structure is annealed. The photoresist layer is selectively exposed and developed. Preferably, the annealing process is carried out at the temperature of 150-250 °C. Preferably, the exposing process is carried out by using one selected from a group consisting of VUV, ArF, KrF, EUV, E-beam, X-ray, and ion beam.
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