METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve capacitance by having a storage electrode pattern formed of a line and a space so that the area of a storage electrode is increased. CONSTITUTION: After the first insulation layer is formed on the first conductive layer, the first insulation layer is selectively etched. A predetermined depth of the first conductive layer is etched by using the first insulation layer as a mask to define an isolation region and a trench region. The second insulation layer(106) is deposited and planarized on the resultant structure. The second insulation layer in the trench region is eliminated. The third insulation layer(108) is formed on the resultant structure. The second conductive layer is formed on the third insulation layer through a planarization process. The second conductive layer is selectively etched.