| 摘要 |
PURPOSE: A method for forming a photoresist pattern of a semiconductor device is provided to be capable of preventing photoresist pattern collapse having an aspect ratio of 1:3, or less, by forming the second photoresist pattern having an aspect ratio of 1:2.5, or more, on the first photoresist pattern used as an diffusion barrier layer. CONSTITUTION: An anti-reflective layer(33) is formed on a lower structure(31). The first photoresist pattern(35) used as an diffusion barrier layer, is formed on the predetermined portion of the anti-reflective layer(33) for preventing the diffusion of H+ ions existing in the anti-reflective layer(33). The second photoresist pattern(37) is then formed on the first photoresist pattern(35). At this time, the second photoresist pattern is thicker than the first photoresist pattern.
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