发明名称 |
ELECTRONIC COMPONENT AND MANUFACTURING PROCESS THEREFOR |
摘要 |
PURPOSE: To form desired plated films only on desired parts at a low cost. CONSTITUTION: When a plurality of Zn fragments with an average diameter of 1 mm having an electrochemically poorer resting potential compared to the deposition potential of Ni are mixed with a substrate to be plated in a plating bath, Zn is dissolved and electrons are released. This shifts the potential of a Cu electrode in contact with Zn to a poorer potential, which allows the deposition of Ni on the electrode to form an Ni coating film 3 on the surface of the electrode. Similarly, when Zn fragments are soaked in a tin-plating bath, Zn is dissolved and electrons are released. This shifts the potential of the Ni coating film 3 in contact with Zn to a poorer potential, allowing the deposition of Sn on the Ni coating film 3 to form an Sn coating film 4.
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申请公布号 |
KR20030051348(A) |
申请公布日期 |
2003.06.25 |
申请号 |
KR20020080377 |
申请日期 |
2002.12.16 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KUNISHI TATSUO;NUMATA TOSHI;SAITOH JUNICHI;SAKABE YUKIO |
分类号 |
C23C18/34;C23C18/31;C23C18/32;C23C18/52;C23C18/54;H01G2/06;H01G4/248;H05K3/24;(IPC1-7):C23C18/32 |
主分类号 |
C23C18/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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