| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer for a chemical amplification type photoresist suitable for ArF excimer laser, and further to provide a photoresist composition. <P>SOLUTION: This polymer for the chemical amplification type photoresist is represented by general formula (I) [wherein, R<SB>1</SB>is a hydrogen atom, a 1-10C alkyl group, a 3-12C cycloalkyl group, a 1-10C alkoxy group or a 3-12C cycloalkoxy group; R<SB>2</SB>and R<SB>4</SB>are each a hydrogen atom or a methyl group; R<SB>3</SB>is a cyclohexyl group; R<SB>5</SB>is a tert-butyl group, a tetrahydropyranyl group or a 2-methyladamantyl group; (a)/(a+b+c) is 0.2-0.8; (b)/(a+b+c) is 0.05-0.5; and (c)/(a+b+c) is 0.1-0.5]. <P>COPYRIGHT: (C)2003,JPO |
