发明名称 |
Methods for repairing defects on a semiconductor substrate |
摘要 |
The present invention relates to methods for repairing defects on a semiconductor substrate. This is accomplished by selectively depositing the conductive material in defective portions in the cavities while removing residual portions from the field regions of the substrate. Another method according to the present invention includes forming a uniform conductive material overburden on a top surface of the substrate. The present invention also discloses a method for depositing a second conductive material on the first conductive material of the substrate.
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申请公布号 |
US6582579(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US20000534704 |
申请日期 |
2000.03.24 |
申请人 |
NUTOOL, INC. |
发明人 |
UZOH CYPRIAN |
分类号 |
H01L21/288;H01L21/321;H01L21/768;(IPC1-7):C25D5/02 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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