| 摘要 |
A method of isolation of active regions on a silicon-on-insulator semiconductor device, including the steps of:providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric isolation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric isolation layer and the dielectric isolation layer is formed on the silicon substrate; etching through the silicon active layer to form an isolation trench, the isolation trench defining an active region in the silicon active layer; forming a liner oxide by oxidation of exposed silicon in the isolation trench; and filling the isolation trench with a tensile stress-reducing low density trench isolation material, without thereafter densifying the tensile stress-reducing low density trench isolation material.
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