发明名称 |
Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor |
摘要 |
A memory cell array has memory cells in which there is an electrical connection between a polycrystalline semiconductor material of a capacitor electrode and a monocrystalline semiconductor region. Islands made of an amorphous material are disposed in a vicinity of the electrical connection between the polycrystalline semiconductor material and the monocrystalline semiconductor region. The islands are produced in particular by thermally breaking up an amorphous layer which has been formed by thermal oxidation. The memory cell array is in particular a DRAM array with a trench capacitor.
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申请公布号 |
US6583464(B1) |
申请公布日期 |
2003.06.24 |
申请号 |
US19980201733 |
申请日期 |
1998.11.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BERTAGNOLLI EMMERICH;BECKMANN GUSTAV;BIANCO MICHAEL;KLOSE HELMUT |
分类号 |
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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