| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that there is no method of detecting variations in conditions (deviation of exposure and focus) of an exposure system at a product wafer level in a lithography process. SOLUTION: The calculation results of features such as electron beam images, line profiles, and sizes for various exposures and focal value are previously stored as libraries, and the calculation result and the electron beam image of a product wafer is compared with each other, so that a variation in exposure and focus can be easily detected, and a comparison result can be easily verified on an image screen. COPYRIGHT: (C)2003,JPO
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