METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor capable of manufacturing the object compound semiconductor on an InP crystal without the special facility of dealing with P.

SOLUTION: The method for manufacturing the compound semiconductor comprises the steps of first growing a cap layer 3 under the growing condition of a low temperature, in which the separation of the P from the InP substrate 2 is small by an MOCVD method when a required compound semiconductor crystal layer 4 not containing the P is grown and formed on the InP substrate 2 by the MOCVD method; forming the cap layer 3 while the separation of the P from the InP substrate is effectively suppressed without supplying a PH3; covering the surface of the InP substrate 2 with the cap layer 3 to preferably suppress the separation of the P from the InP substrate 2 even at a high temperature; and then growing the compound semiconductor crystal layer 4 on the cap layer 3 at a high growing temperature.

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