| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film semiconductor epitaxial substrate for inhibiting increase in forward rising voltage and at the same time improving reverse breakdown voltage characteristics. SOLUTION: In the thin-film semiconductor epitaxial substrate 1 having an n+GaAs layer 4 for composing a p-n junction, and a p+GaAs layer 8, an i-InGap layer 5 having a bandgap that is larger than that of the n+GaAs layer 4 is provided on a surface 4a of the n+GaAs layer 4, thus improving reverse withstand voltage characteristics. Then, by appropriately setting the impurity concentration of the n+GaAs layer 4, the conductivity is adjusted, and increase in the forward rising voltage due to the improvement of withstand voltage characteristics is inhibited. COPYRIGHT: (C)2003,JPO
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