| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a multilayer wiring capable of preventing the generation of peeling due to the swell of an edge of a low permittivity film formed according to coating process, and to provide a method for manufacturing a semiconductor device capable of achieving a low cost and a high yield. SOLUTION: First, the low permittivity film 21 (a first insulating film) is formed on a wafer 20 according to spin-coating. After the outer peripheral part of the low permittivity film 21 is removed, an inorganic film 22 (a second insulating film), whose material is different from that of the low permittivity film 21, is formed. Then, after a photo-resist is formed on the inorganic film 22, the outer peripheral part thereof is removed to obtain a photo-resist layer 23 and a swell part 22a of the low permittivity film 21 and the inorganic film 22 is exposed. Then, a pattern is formed by etching the low permittivity film 21 and the inorganic film 22. COPYRIGHT: (C)2003,JPO
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