| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the operational reliability of a semiconductor device having a bipolar transistor. <P>SOLUTION: An isolation part IS3 and an isolation part IS5 are arranged in such a way that the area of an active region in an npn transistor QN3 and a pnp transistor QP1 forming a pair becomes nearly equal. <P>COPYRIGHT: (C)2003,JPO |
| 申请公布号 |
JP2003174100(A) |
申请公布日期 |
2003.06.20 |
| 申请号 |
JP20010370870 |
申请日期 |
2001.12.05 |
| 申请人 |
HITACHI LTD |
发明人 |
TAMAOKI YOICHI;OTANI OSAMU;TOMATSURI TOMOYUKI |
| 分类号 |
H01L21/8247;H01L21/331;H01L21/8228;H01L21/8229;H01L21/8242;H01L21/8249;H01L27/06;H01L27/082;H01L27/10;H01L27/102;H01L27/108;H01L27/115;H01L29/732;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
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