| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for cleaning a deposit adhered to the reaction chamber of a semiconductor manufacturing apparatus without opening the reaction chamber and the glove-box with the atmosphere, without soaring the deposit in the reaction chamber and the glove-box by the exhaust gas of a cleaner, and further without consuming a large quantity of an atmospheric gas due to the discharge of the exhaust gas out of the reaction chamber and the glove-box. SOLUTION: The method for cleaning the semiconductor thin film manufacturing apparatus comprises the steps of sucking the deposit 2 together with the atmospheric gas 3 in the reaction chamber of the semiconductor thin film manufacturing apparatus when the deposit 2 generated in the reaction chamber of the apparatus is removed, separating by-filtering the deposit 2, the atmospheric gas 3, the gas generated from the atmospheric gas 3 containing the deposit 2 from the atmospheric gas 3 containing the deposit 2 sucked by a suction nozzle 4, and returning and circulating the separated gas 3 into the reaction chamber. COPYRIGHT: (C)2003,JPO
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