INSULATING GATE BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an IGBT which has a fast switching characteristic improved while having its on-resistance held small. SOLUTION: The insulating gate type bipolar transistor has an insulating gate transistor which switches a current flowing in the direction of thickness of an N-type semiconductor base body on one surface of the semiconductor base body, and a Schottky junction which imposes conductivity modulation by injecting holes into the semiconductor base body when the insulating gate transistor is on on the other surface. An insulating film partially having an opening is formed on the other surface of the semiconductor base body, and a drain electrode is further formed on the top surface side of the insulating film to form the Schottky junction of the semiconductor base body and drain electrode in the region opened in the insulating film. COPYRIGHT: (C)2003,JPO