发明名称 ABNORMALITY DETECTION DEVICE FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that a circuit scale for service life determination is required to be enlarged for determining the service life, such as current detection, radiation fin temperature detection, an element temperature estimation part, or an operation part of the number of times of thermal stress. SOLUTION: This abnormality detection device for a semiconductor device has a power semiconductor 9 constituted by bonding by solder element electrodes 2, 3 on one side and the other side to a semiconductor element 1. The device is equipped with a temperature detection means for measuring each temperature near the element electrodes 2, 3 on one side and the other side at the ON operation time of the power semiconductor 9 by thermocouples 6, 7, and detecting the detection temperature of the power semiconductor 9, a determination part 13 for determining the service life of the power semiconductor 9 by deterioration of the solder by comparing the detection temperature with a determination reference value, and performing service life notice of the semiconductor device 8, and a service life notice output terminal 14 for outputting a service life notice output signal for the service life notice. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003172760(A) 申请公布日期 2003.06.20
申请号 JP20010371575 申请日期 2001.12.05
申请人 OMRON CORP 发明人 YAMAGAMI TOSHIMITSU
分类号 G01R31/26;(IPC1-7):G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项
地址