发明名称 |
SEGMENTED WRITE LINE ARCHITECTURE |
摘要 |
This invention presents a novel write line segmentation architecture for writing magnetoresitive random access memories (MRAM). Only the memory cells in a selected segment get a high hard axis field generated by a write line current. Memory cells of deselected segments do not receive this hard axis field. This prevents an undesired state change in particularly sensitive memory cells.
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申请公布号 |
US2003112654(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20010016859 |
申请日期 |
2001.12.13 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
LAMMERS STEFAN;ARNDT CHRISTIAN |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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