| 摘要 |
PURPOSE: A method for forming a gate spacer having a buffer oxide layer in a semiconductor device is provided to be capable of preventing undesired etching of the buffer oxide layer. CONSTITUTION: A gate electrode(15) sequentially stacked on a gate oxide layer(12), a gate conductive layer(13) and a hard mask(14), is formed on a silicon substrate(11). A buffer oxide layer(17) is deposited on the resultant structure. A fluidity oxide layer having relatively high etching speed compared to the buffer oxide layer, such as SOG(Spin On Glass), is coated on the buffer oxide layer(17). By etching the fluidity oxide layer and the buffer oxide layer, the fluidity oxide layer is entirely removed and the buffer oxide layer is partially removed to expose the surface of the hard mask(14). Then, a nitride spacer(19) is formed at both sidewalls of the gate electrode(15).
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