| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device having a dual metal gate electrode is provided to be capable of reducing threshold voltage and preventing attack of boron ions into a channel region. CONSTITUTION: A sacrificial gate structure including sacrificial gate nitride and oxide layer is formed on a silicon substrate(21) having a trench isolation layer(22). After forming LDD(Lightly Doped Drain) regions in the substrate, a spacer(26) is formed at both sidewalls of the sacrificial gate structure. A source and drain region(27a,27b,27c,27d) are formed in the substrate, and self-aligned silicide layers(28) are formed on the source and drain region. After removing an n-type gate region of the sacrificial gate structure, an n-type gate oxynitride layer(30a) and an n-type ferroelectric gate insulating layer(31) are sequentially formed. An n-type gate electrode(33) is formed on the n-type gate insulating layer. After removing a p-type gate region of the sacrificial gate structure, a p-type gate oxynitride layer(30b) and a p-type ferroelectric gate insulating layer(34) are sequentially formed. A p-type gate electrode(36) is formed on the p-type gate insulating layer.
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