发明名称 Method for thermal processing semiconductor wafer
摘要 The present invention provides a method for thermal processing a semiconductor wafer wherein the semiconductor wafer is heat-treated by means of flash radiation means constituted by a flash discharge lamp after preheating the semiconductor wafer to a predetermined temperature by means of preheating means, the preheating is performed at a preheating temperature capable of controlling that the maximum tension of the semiconductor wafer when heated by the flash radiation means is to be less than the tense strength of the semiconductor wafer itself.
申请公布号 US2003114019(A1) 申请公布日期 2003.06.19
申请号 US20020318094 申请日期 2002.12.13
申请人 USHIO DENKI KABUSHIKI KAISYA 发明人 MIYAUCHI KOJI;OWADA TATSUSHI
分类号 H01L21/00;H01L21/324;(IPC1-7):H01L21/26;H01L21/42;H01L21/477 主分类号 H01L21/00
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