METHOD OF FORMING CONTACT PLUG IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a contact plug in a semiconductor device is provided to achieve trust isolation between contact plugs and prevent gate attack in peripheral regions and residue generated from dicing of an oxide layer. CONSTITUTION: A semiconductor substrate(1) is provided which has several gate electrodes(2) which is totally covered with an oxide layer(3). To form a contact hole(6), a portion of the oxide layer is selectively etched to expose a portion between a gate and a gate closest to it. A polysilicon layer is deposited on the resultant structure to bury the contact hole. The polysilicon layer and the oxide layer are polished until the height of the gate electrode. The polysilicon layer is blank-etched to expose the gate electrode.