| 摘要 |
<p>The invention concerns a photodiode comprising an upper junction PN (D1) formed on a top layer and an intermediate layer supported by a portion of a semiconductor substrate. A lower junction is formed between the intermediate layer and the substrate portion. The voltage activating direct conduction of the upper junction (D1) is lower than the voltage activating direct conduction of the lower junction (D2). The method consists in allowing storage of loads in the photodiode until activation of direct conduction of the upper junction so as to promote (F1) the recombination of carriers derived from the intermediate layer with carriers of the top layer.</p> |
