发明名称 |
Magneto-resistive memory array |
摘要 |
A low power, high speed magneto-resistive memory is disclosed. The disclosed memory directly senses the resistive state of one or more magneto-resistive memory elements. This allows the memory to be read during a single read cycle, without the need for a word line current. This may substantially increase the speed and reduce the power of the memory.
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申请公布号 |
US2003112657(A1) |
申请公布日期 |
2003.06.19 |
申请号 |
US20030352278 |
申请日期 |
2003.01.27 |
申请人 |
LU YONG;ZHU THEODORE;KATTI ROMNEY R. |
发明人 |
LU YONG;ZHU THEODORE;KATTI ROMNEY R. |
分类号 |
G11C11/15;G11C11/56;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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