| 摘要 |
PURPOSE: A magnetoresistive RAM(Random Access Memory) is provided to reduce a size of a magnetoresistive RAM cell by memorizing multiple data according to the magnetizing direction of an MTJ(Magnetic Tunnel Junction) within the magnetoresistive RAM. CONSTITUTION: A magnetoresistive RAM includes a multiple data detection circuit(100) to convert the current of a magnetoresistive RAM cell connected to a bit line and detect multiple data according to a difference between the magnetizing directions of an MTJ within the magnetoresistive RAM cell. The data detection circuit includes a current-voltage conversion portion(110), a plurality of sense amplifiers(120,130,140) which generate reference voltage having different values, and a data encoder(150). The current-voltage conversion portion converts the current of a magnetoresistive RAM cell to the voltage and generates the multiple data. The sense amplifiers are used for generating and amplifying plural data by using the reference voltage. The data encoder is used for encoding the plural data.
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