| 摘要 |
PURPOSE: To realize metal silicidation of bit lines and word lines while avoiding short circuits and to further increase the operating speed of a semiconductor memory while suppressing the wiring resistance. CONSTITUTION: On a silicon oxide film, a resist pattern is formed which has such a shape as to expose only a part which is necessary for electric insulation between adjacent bit lines 7, which in this case is a connection hole formation region 11 for forming a contact hole of the bit lines 7 and a connection hole formation region 12 for forming a contact hole of the word lines 8. With the resist pattern as a mask, the silicon oxide film is anisotropically etched over the entire surface to form an insulation region. Under this condition, silicidation is conducted to form a silicide 15 on the surface of the bit lines 7 exposed in the connection hole formation region 11 and on the surface of the source and drain in an active region 4 of a peripheral circuit.
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