发明名称 FIELD-EFFECT TRANSISTOR
摘要 <p>An object is to provide a field effect transistor which uses a liquid electrolyte as a gate and which operates stably in the liquid electrolyte. A field effect transistor includes a channel (2) formed of a portion of a hydrogen-terminated surface of a diamond, the portion being exposed to the outside between a gate electrode (3) and a drain electrode (6); and a gate formed of a liquid electrolyte (4) in contact with the exposed portion of the hydrogen-terminated surface of the diamond. <IMAGE></p>
申请公布号 EP1186885(A4) 申请公布日期 2003.06.18
申请号 EP20010915765 申请日期 2001.03.26
申请人 JAPAN SCIENCE AND TECHNOLOGY CORPORATION 发明人 KAWARADA, HIROSHI
分类号 G01N27/26;G01N27/414;H01L29/80;(IPC1-7):G01N27/414 主分类号 G01N27/26
代理机构 代理人
主权项
地址