| 摘要 |
PURPOSE: A fuse structure of a semiconductor device is provided to prevent the capacity of a metal oxide semiconductor(MOS) transistor from being deteriorated by making melted metal residue remain in the vicinity of an upper metal layer separated from the MOS transistor by quite a distance. CONSTITUTION: The fuse structure(100) is electrically connected with other metal layers via holes in a dielectric layer(10). The metal layer has higher resistivity so as to become an ideal fuse structure. The shape of metal layer is narrow at end wide in middle to form a narrow channel, so as to reduce the fusing current. |
