| 摘要 |
A structure and process for fabricating a bipolar junction transistor (BJT) compatible with the fabrication of a vertical MOSFET is disclosed. At least three layers of material (210, 215, 220) are formed on a semiconductor substrate (200) having buried collector region (206). A trench (227) is formed in the layers terminating at buried collector region (206). A semiconductor plug (231) is then deposited in trench (227). The bottom portion (234) of plug (231), forming the BJT collector, has the same conductivity as the buried collector region (206), and the top portion (235) has opposite conductivity and forms the BJT base. A further overlying layer (241) forms the BJT emitter and has the same conductivity as the collector region. One of the layers (215, Fig. 1F) may be then be etched as a sacrificial layer, followed by deposition of a gate dielectric or oxide (250), and a control terminal (266). The process may occur simultaneously with the fabrication of a vertical MOSFET, where a semiconductor plug (230) of one conductivity type is deposited in another trench (225), and a MOSFET gate (265) and dielectric (250) are formed in the same process as the deposition of the dielectric and gate of the BJT.
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