发明名称 Semiconductor power device metal structure and method of formation
摘要 In accordance with one embodiment, a stress buffer ( 40 ) is formed between a power metal structure ( 90 ) and passivation layer ( 30 ). The stress buffer ( 40 ) reduces the effects of stress imparted upon the passivation layer ( 30 ) by the power metal structure ( 90 ). In accordance with an alternative embodiment, a power metal structure ( 130 A) is partitioned into segments ( 1091 ), whereby electrical continuity is maintained between the segments ( 1090 ) by remaining portions of a seed layer ( 1052 ) and adhesion/barrier layer ( 1050 ). The individual segments ( 1090 ) impart a lower peak stress than a comparably sized continuous power metal structure ( 9 ).
申请公布号 AU2002352683(A8) 申请公布日期 2003.06.17
申请号 AU20020352683 申请日期 2002.11.13
申请人 MOTOROLA, INC. 发明人 LEI L. MERCADO;YOUNG SIR CHUNG;JAMES JEN-HO WANG;VIJAY SARIHAN;EDWARD R. PRACK
分类号 H01L21/60;H01L21/768;H01L23/31;H01L23/485;H01L23/532 主分类号 H01L21/60
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