| 摘要 |
In a profile extraction method, a long channel profile is first extracted through an initial profile generating stage and a long channel profile extraction stage. In a following two-dimensional profile extraction stage, a two-dimensional channel profile extraction stage and a source/drain profile extraction stage are repeated to extract an optimized two-dimensional channel profile and an optimized source/drain profile. In the two-dimensional channel profile extraction stage, a two-dimensional channel profile is extracted from the gate length dependency of the threshold voltage. In addition, in the source/drain profile extraction stage, a source/drain profile is extracted from the substrate bias voltage dependency of the threshold voltage-gate length characteristics.
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