| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a fine pattern can be formed with high dimensional accuracy in multiple exposure using a phase shift mask and a trimming mask. <P>SOLUTION: At least four shift patterns are provided with, preferably, very thin line patterns formed of phase edges at the center so that the phases of shift patterns adjoining very thin line patterns formed of the phase shift masks become opposite to each other. The shift patterns are arranged so that the phases of the shift patterns necessarily become opposite to each other. <P>COPYRIGHT: (C)2003,JPO |
